Computational Optimization Of Ring Resonators Using Maxwell’s Equations For Realistic Silicon And Silicon Nitride Designs

Abstract

This work presents a physics-driven optimization of commercial-grade ring resonators based on explicit Maxwell’s equations, targeting realistic fabrication constraints. Two material platforms—silicon (Si) and silicon nitride (Si N)—are analyzed with experimentally grounded parameters: Si waveguides (width = 0.45 μ m, thickness = 0.22 μ m, radius = 7 μ m) and Si N waveguides (width = 1.5 μ m, thickness = 0.8 μ m, radius = 15 μ m), both operating at λ = 1.55 μ m. Fundamental loss mechanisms—bending, surface roughness, material absorption, radiation, and coupling—are modeled directly from Maxwell’s formalism. The optimized Si design achieves a Q-factor of 19,508, a 1.3× improvement over the baseline (15,400 for a 4 μ m radius), while the Si N design reaches 48,718, demonstrating superior low-loss performance. Results align with industrial benchmarks and validate the use of first-principles electromagnetics for designing high-performance photonic integrated circuits.