Influence Of Deposition Temperature On The Structural Properties Of Znte Thin Films Prepared By Pulsed Laser Deposition

Abstract

In the pulsed laser deposition (PLD) technique, the substrate deposition temperature is the main parameter controlling the thin film crystallisation and growth characteristics. While previous research has provided valuable insights, the present study aims to extend the understanding by controlling the deposition temperature to obtain an ideal crystal structure. Raising the substrate temperature to extremely high values does not guarantee better film properties. Increasing the temperature above 500 ° C permanently damages the film, degrading the physical and chemical properties. The research used a comparative practical strategy to identify the best crystal structure and the lowest defect formation while minimising structural distortion. The XRD results demonstrated that three zinc telluride (ZnTe) thin films with increasing growth temperatures from 100 ° C to 300 ° C preferred the crystallographic plane orientation (111). The temperature control showed apparent differences in peak intensity and sharpness because the structural quality varied. The film processed at 300 ° C demonstrated the most prominent peak, indicating superior crystal order with better atomic motion and reduced overall structural defects. The structural defects that prevail in thin films lead to disturbed growth that might sometimes result in enduring material deformation. Our research provides crucial insights into the effects of thermal energy on PLD-manufactured thin film quality, which future scientists can use to specify process parameters for practical use. The SEM image of the film produced at 300 ° C showed a uniform surface that contained aligned grain structures evenly distributed across the surface of the thin film.