Optimization Of Synthesis And Characterization Of The Novel Optical And Electrical Properties Of Layered Transition Metal Doped In Semiconductor

Authors

  • Rupali Hulavale Author
  • Aloke Varma Author

DOI:

https://doi.org/10.64252/hy8hxj29

Keywords:

Transition metal doping, CoFe₂O₄ nanoparticles, MEH-PPV, P3HT, bandgap tuning, photoluminescence, hole mobility, organic electronics.

Abstract

This study presents a detailed investigation into the optimization of synthesis and characterization of layered transition metal-doped semiconductors, focusing on their enhanced optical and electrical properties. CoFeO magnetic nanoparticles were synthesized using a microwave-assisted hydrothermal method and integrated into organic semiconducting polymers MEH-PPV and P3HT through solution processing and spin coating. The resulting thin films exhibited altered energy band structures and charge transport dynamics. Optical band gaps of MEH-PPV and P3HT were reduced to 2.15 eV and 1.97 eV, respectively, indicating enhanced light absorption. PL spectra revealed red-shifted emission peaks with increased intensity in films compared to solutions, confirming molecular ordering and efficient exciton recombination. Electrical measurements showed hole mobility reduction by 40% upon CoFe doping, with hole density increasing to 2.1×10¹ cm³ (Device 2) compared to 1×10¹ cm³ (Device 1). Temperature-dependent J–V analysis from 98 K to 300 K confirmed a transition from ohmic to SCLC behavior. The optimized curing temperature for RR-P3HT films was found to be 120°C, yielding minimal background doping and improved transport. These findings provide insights into how transition metal doping, processing conditions, and temperature influence semiconductor functionality, with implications for OLEDs, OPVs, sensors, and spintronic devices.

Downloads

Download data is not yet available.

Downloads

Published

2025-08-20

Issue

Section

Articles

How to Cite

Optimization Of Synthesis And Characterization Of The Novel Optical And Electrical Properties Of Layered Transition Metal Doped In Semiconductor. (2025). International Journal of Environmental Sciences, 324-339. https://doi.org/10.64252/hy8hxj29