Optimization Of Synthesis And Characterization Of The Novel Optical And Electrical Properties Of Layered Transition Metal Doped In Semiconductor
DOI:
https://doi.org/10.64252/hy8hxj29Keywords:
Transition metal doping, CoFe₂O₄ nanoparticles, MEH-PPV, P3HT, bandgap tuning, photoluminescence, hole mobility, organic electronics.Abstract
This study presents a detailed investigation into the optimization of synthesis and characterization of layered transition metal-doped semiconductors, focusing on their enhanced optical and electrical properties. CoFe₂O₄ magnetic nanoparticles were synthesized using a microwave-assisted hydrothermal method and integrated into organic semiconducting polymers MEH-PPV and P3HT through solution processing and spin coating. The resulting thin films exhibited altered energy band structures and charge transport dynamics. Optical band gaps of MEH-PPV and P3HT were reduced to 2.15 eV and 1.97 eV, respectively, indicating enhanced light absorption. PL spectra revealed red-shifted emission peaks with increased intensity in films compared to solutions, confirming molecular ordering and efficient exciton recombination. Electrical measurements showed hole mobility reduction by 40% upon CoFe doping, with hole density increasing to 2.1×10¹⁸ cm⁻³ (Device 2) compared to 1×10¹⁸ cm⁻³ (Device 1). Temperature-dependent J–V analysis from 98 K to 300 K confirmed a transition from ohmic to SCLC behavior. The optimized curing temperature for RR-P3HT films was found to be 120°C, yielding minimal background doping and improved transport. These findings provide insights into how transition metal doping, processing conditions, and temperature influence semiconductor functionality, with implications for OLEDs, OPVs, sensors, and spintronic devices.