Comprehensive Evaluation Of SRAM Cells: Design And Validation Of 6T To 10T Architectures
DOI:
https://doi.org/10.64252/bwda5d66Keywords:
10T SRAM, 6T SRAM, 7T SRAM, 8T SRAM, 9T SRAM, CMOS Technology, Low Power Design, Memory Stability, Nano-CMOS, Process Variation, Read Static Noise Margin, SRAM Cell Design, Static RAM, Transistor-Level Simulation, Write Ability, Write Static Noise MarginAbstract
This study presents a comprehensive evaluation of Static Random-Access Memory (SRAM) cells focusing on the design and validation of architectures ranging from six-transistor (6T) to ten-transistor (10T) configurations. SRAM cells are critical components in modern integrated circuits, especially in cache memories where speed, power efficiency, and stability significantly impact overall system performance. The research investigates various design parameters such as power consumption, static noise margin (SNM), read/write stability, leakage power, and area overhead across different SRAM topologies. The 6T SRAM cell, while popular for its minimal area and simple structure, suffers from lower stability and higher leakage in nanoscale technologies, prompting the exploration of advanced designs such as 7T, 8T, 9T, and 10T cells that aim to alleviate these limitations. Methodologies for validation include detailed simulations using state-of-the-art FinFET and MOSFET models, focusing on performance metrics like access time, power-delay product (PDP), and robustness against process and environmental variations. The findings demonstrate that higher transistor count cells, particularly 10T SRAM designs, offer substantial improvements in noise margins and reduced leakage currents, resulting in enhanced reliability and operation at lower supply voltages. However, these gains come at the cost of increased area and complexity, underscoring the trade-offs inherent in SRAM design. This evaluation also explores the incorporation of assist circuits and innovative device structures to optimize the trade-off between power, speed, and stability for next-generation low-power, high-performance computing systems. The results provide valuable insights and guidelines for designers to select appropriate SRAM architectures based on application-specific demands, facilitating the advancement of reliable memory technology in deep submicron and beyond technologies (Design, Testing, and Validation of SRAM Cells: From 6T to 10T ..., 2025).
